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Au nanocrystal-based memory device

Based on

1 Articles
2013 Most recent source

Composition

1

p-type silicon

p-type Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

gold nanocrystals

Au nanocrystals Au NC
Type
Formula
Role
4

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role blocking layer
5

tantalum(III) nitride

tantalum nitride
Type Single Compound
Formula NTa
Role adhesion layer
6

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
7

chromium

Type Single Compound
Formula Cr
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role bottom electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on annealing on blocking layer

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  • oxygen
Product

Au nanocrystal-based memory device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  • oxygen
Product

Au nanocrystal-based memory device

Size: not specified

Medium/Support: none

References

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