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patterned bottom-gate MoS2 nanosheet field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

SiO2/p+-Si wafer

Type Complex Compound
Formula
Role substrate
2

gold

Type Single Compound
Formula Au
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
4

MoS2 nanosheets

Type
Formula
Role
5

titanium

Type Single Compound
Formula Ti
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/p+-Si wafer
  1. ZBXrxVPW
Product

patterned bottom-gate MoS2 nanosheet field-effect transistor

Size: not specified

Medium/Support: none

References

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