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single crystal field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate
3

CTL-809M

Cytop
Type Polymer
Formula
Role gate dielectrics
4

CNT/Au electrode

Type Nano Material
Formula
Role source
5

CNT/Au electrode

Type Nano Material
Formula
Role drain
6

single walled carbon nanotubes

Type
Formula
Role
7

5,6,11,12-tetraphenylnaphthacene

5,6,11,12-tetraphenyltetracene ruberene rubrene RUB RU
Type
Formula C42H28
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • CTL-809M
  • mixture of substance based on (p-doped silicon/p-doped silicon/silicon dioxide/silicon dioxide)
  1. XbqQxO1F
Product

single crystal field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • CTL-809M
  • mixture of substance based on (p-doped silicon/p-doped silicon/silicon dioxide/silicon dioxide)
  1. rjiCBhdX
Product

single crystal field-effect transistor

Size: not specified

Medium/Support: none

References

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