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GaN-based light-emitting diode with photonic quasi-crystal structure on p-GaN surface

Based on

1 Articles
2013 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

silicon-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role n-type semiconductor layer
4

unintentionally doped InGaN/GaN multiple quantum wells

In0.18Ga0.82N/GaN quantum wells InGaN/GaN MQW
Type Nano Material
Formula
Role photoactive layer
5

Mg-doped aluminium gallium nitride

p-AlGaN
Type Complex Compound
Formula
Role hole transport layer
6

photonic quasi-crystal structure on p-GaN surface

PQC on p-GaN surface
Type Nano Material
Formula
Role p-type semiconducting layer
7

Cr/Pt/Au

Type Nano Material
Formula
Role electrodes
8

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
dynamic resistance

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium nitride
  • sapphire
Product

GaN-based light-emitting diode with photonic quasi-crystal structure on p-GaN surface

Size: not specified

Medium/Support: none

References

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