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p-channel flash memory device based on rGO doped with AuCl3

Based on

1 Articles
2014 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

silver

Type Single Compound
Formula Ag
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role blocking dielectric layer
4

AuCl3-doped rGO

Type Nano Material
Formula
Role floating gate
5

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role tunneling dielectric layer
6

pentacene

PEN
Type Single Compound
Formula C22H14
Role p-type semiconductor
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  • silver
Product

p-channel flash memory device based on rGO doped with AuCl3

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • poly(ethylene terephthalate)
  • silver
Product

p-channel flash memory device based on rGO doped with AuCl3

Size: not specified

Medium/Support: none

References

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