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InSb nanowire-based field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

p-type silicon

p-Si
Type Complex Compound
Formula
Role back-gate electrode
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

indium antimony nanowire

InSb nanowire
Type Nano Material
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

copper

Type Single Compound
Formula Cu
Role drain
6

copper

Type Single Compound
Formula Cu
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier concentration

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. LEcddz5t6RvrzucpK
Product

InSb nanowire-based field-effect transistor

Size: not specified

Medium/Support: none

References

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