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n-channel F16CuPC field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

silver

Type Single Compound
Formula Ag
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role blocking dielectric layer
4

reduced graphene oxide monolayer

rGO monolayer
Type Nano Material
Formula
Role floating gate
5

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role tunneling dielectric layer
6

1,2,3,4,8,9,10,11,15,16,17,18,22,23,24,25-hexadeca-fluorophthalocyaninato copper(II)

hexadeca-fluoro-phthalocyaninatocopper copper hexadecafluoro-phthalocyanine copper hexadecafluorophthalocyanine fluorinated copper phthalocyanine copper perfluorophthalocyanine F16CuPC F16CuPc F16PcCu
Type Single Compound
Formula C32CuF16N8
Role n-type semiconductor
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • poly(ethylene terephthalate)
  • silver
Product

n-channel F16CuPC field-effect transistor

Size: not specified

Medium/Support: none

References

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