Loading ...

ferroelectric-gate field effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
2

gold

Type Single Compound
Formula Au
Role source
3

gold

Type Single Compound
Formula Au
Role drain
4

poly(3-hexylthiophene)

P3HT
Type
Formula
Role
5

mixture of substance based on (poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)/poly(vinylidene fluoride-trifluoroethylene-chlorotrifluoroethylene)/poly(vinylidene fluoride-co-trifluoroethylene)/poly(vinylidene fluoride-co-trifluoroethylene))

Type Complex Compound
Formula
Role gate insulator
6

aluminium

aluminum
Type Single Compound
Formula Al
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
source-drain current

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  1. yAhM8D64Df
  2. HxTkCaP
Product

ferroelectric-gate field effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial