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C-interlayer SiOx memory device

Based on

1 Articles
2014 Most recent source

Composition

1

SiO2/Si substrate

Type Complex Compound
Formula
Role substrate
2

platinum

Type Single Compound
Formula Pt
Role bottom electrode
3

silicon-rich silicon oxide

amorphous silicon suboxide amorphous silicon oxide silicon-rich oxide silicon suboxide amorphous SiOx silicon oxide a-SiOx glass SRSO SiOx SRO
Type Single Compound
Formula SiO(x)
Role dielectric layer
4

glass-like carbon

vitreous carbon glassy carbon carbon GC
Type Single Compound
Formula C
Role conducting layer
5

silicon-rich silicon oxide

amorphous silicon suboxide amorphous silicon oxide silicon-rich oxide silicon suboxide amorphous SiOx silicon oxide a-SiOx glass SRSO SiOx SRO
Type Single Compound
Formula SiO(x)
Role dielectric layer
6

palladium

Type Single Compound
Formula Pd
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on cycle number

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • platinum
Product

C-interlayer SiOx memory device

Size: not specified

Medium/Support: none

References

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