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free-standing OFET based on PDI-C8

Based on

1 Articles
2013 Most recent source

Composition

1

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
2

polyacrylonitrile

PAN
Type Polymer
Formula
Role dielectric layer
3

polystyrene

PS
Type Polymer
Formula
Role dielectric layer
4

N,N'-dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide

N,N'-dioctyl-3,4,9,10-perylenetetracarboxylic diimide N,N'-dioctyl-3,4:9,10-perylene tetracarboxylicdiimide N,N'-dioctyl-3,4,9,10-perylenedicarboximide N,N'-dioctyl perylene diimide PTCDI-C8 PTCDI-C8 PDI-C8 PDI-C8 PDI
Type Single Compound
Formula C40H42N2O4
Role semiconductor layer
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • soda-lime-silica glass
  • aluminium
Product

free-standing OFET based on PDI-C8

Size: not specified

Medium/Support: none

References

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