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phase-change memory

Based on

1 Articles
2011 Most recent source

Composition

1

50 nm thick silicon nitride layer

silicon nitride membrane silicon nitride nanofilm silicon nitride film Si3N4 membrane Si3N4 nanofilm layer of Si3N4 Si3N4 film SiN film
Type
Formula
Role
2

silicon

Type
Formula Si
Role
3

Au film

Type
Formula
Role
4

titanium nitride

Type
Formula TiN
Role
5

Ge2Sb2Te5 film

Type
Formula
Role
6

silicon dioxide film

SiO2 layer SiO2 film
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 6yawvwAYiKYlcbjKg1CA4AhePxJh
Product

phase-change memory

Size: not specified

Medium/Support: none

References

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