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InAs nanowire transistor

Based on

1 Articles
2014 Most recent source

Composition

1

Si/SiO2 wafer

Type Nano Material
Formula
Role substrate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type
Formula HfO2
Role
3

InAs nanowire

InAs NW
Type Nano Material
Formula
Role channels
4

nickel

Type Single Compound
Formula Ni
Role adhesion layer
5

ammonium polysulfide-passivated gold layer

(NH4)2Sx-passivated Au layer
Type Nano Material
Formula
Role electrodes
6

PEO/LiClO4 polymer electrolyte

PEO/LiClO4 film PEO/LiClO4 PE
Type Complex Compound
Formula
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on biased gate electrode

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

InAs nanowire transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

InAs nanowire transistor

Size: not specified

Medium/Support: none

References

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