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superconducting quantum interference device

Based on

1 Articles
2006 Most recent source

Composition

1

degenerately n-doped silicon

Type
Formula
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

APTES self-assembled monolayer

APTES monolayer
Type
Formula
Role
4

high-pressure carbon monoxide single-walled carbon nanotubes

single-walled carbon nanotubes single walled carbon nanotubes single-wall carbon nanotubes carbon nanotubes HiPco SWNT HiPCO SWNT SWCNT SWNT CNT
Type
Formula
Role
5

Pd film

Type
Formula
Role
6

Al film

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
differential conductivity

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Applications

Area Application Nanomaterial Variant Source
other

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • 3-aminopropyltriethoxysilane
  • degenerately n-doped silicon
Product

superconducting quantum interference device

Size: not specified

Medium/Support: none

References

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