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4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole-based ambipolar field-effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

Si/SiO2/4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole/aluminium

Si/SiO2/BTDPP2/Al
Type
Formula
Role
2

silicon

Type
Formula Si
Role
3

4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole film

BTDPP2 film
Type
Formula
Role
4

aluminium

aluminum
Type
Formula Al
Role
5

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. 9PI0rcW4Lmppc
Product

4,7-bis-[2-[2,5-bis(2-ethylhexyl)-6-(5-hexyl-2,2':5',2''-terthiophene-5''-yl)pyrrolo[3,4-c]pyrrolo-1,4-dione-3-yl]-thiophene-5-yl]-2,1,3-benzothiadiazole-based ambipolar field-effect transistor

Size: not specified

Medium/Support: none

References

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