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top-gate solution-processed SWNT transistor with multiple nanotube channels

Based on

1 Articles
2013 Most recent source

Composition

1

SiO2/Si substrate

Type
Formula
Role
2

single-walled carbon nanotubes

SWNT
Type
Formula
Role
3

palladium

Type
Formula Pd
Role
4

p+-doped silicon

Type
Formula
Role
5

ZrO2 layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on oxygen treatment

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
  1. SIFRRR99oByIDaz
  2. yL2ip5xmVDWOEwqQS9BxQo
Product

top-gate solution-processed SWNT transistor with multiple nanotube channels

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
  1. nVHeyG4xDXWxBPE
  2. jHAFnDbMQQK7cVvapDx4aY
Product

top-gate solution-processed SWNT transistor with multiple nanotube channels

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
  1. 9jLdhvHXHzyXoxZ
  2. o6MXqSvKyaBNO3H5NjJHtL
Product

top-gate solution-processed SWNT transistor with multiple nanotube channels

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
  1. ZrWiTPCfYcMvj1a
  2. Qp40v3IJRghvGEwRcNuipy
Product

top-gate solution-processed SWNT transistor with multiple nanotube channels

Size: not specified

Medium/Support: none

References

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