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indium arsenide phosphide nanowires on InP substrate

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

indium arsenide seeds

InAs seeds
Type Nano Material
Formula
Role partial layer
3

indium arsenide nanowires

InAs nanowires InAs NW
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap dependent on temperature

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide nanowires on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Medium: none

Support: Zn-doped InP wafer

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide nanowires on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Wire diameter: ~ 82.4 nm

Wire height: ~ 928.6 nm

Medium: none

Support: Zn-doped InP wafer

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide nanowires on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Wire diameter: ~ 94.1 nm

Wire height: ~ 765.3 nm

Medium: none

Support: Zn-doped InP wafer

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide nanowires on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Medium: none

Support: Zn-doped InP wafer

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide nanowires on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Medium: none

Support: Zn-doped InP wafer

References

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