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GaAs-GaInP core-shell nanowires/Si3N4/GaAs(111)B

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon nitride

Type Single Compound
Formula Si3N4
Role partial layer
2

GaAs-GaInP core-shell nanowires

Type Nano Material
Formula
Role partial layer

Properties

Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si3N4/GaAs
Product

GaAs-GaInP core-shell nanowires/Si3N4/GaAs(111)B

Hole diameter: 100 nm

Pitch: 1000 nm

Medium: none

Support: gallium arsenide

References

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