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indium gallium nitride/gallium nitride nanowires

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Ge-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
2

InGaN/GaN bilayer

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Catalytic properties

Reaction Value Nanomaterial Variant Source
photocatalytic ammonia synthesis

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • germanium
  • gallium
  • nitrogen
  1. eRH12fI7ZRVCSwieMKxw
  2. Gy0LCy
Product

indium gallium nitride/gallium nitride nanowires

Thickness: ~ 400 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • germanium
  • gallium
  • nitrogen
  1. 0aGssPi0xs354FyYeUN2
  2. cqLZH4
Product

indium gallium nitride/gallium nitride nanowires

Thickness: ~ 400 nm

Medium/Support: none

References

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