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p-i-n doped GaN nanopillar-embedded InGaN quantum dots

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped GaN

GaN:Si
Type Complex Compound
Formula
Role layer
2

uid GaN

Type Complex Compound
Formula
Role layer
3

indium gallium nitride quantum dots

InGaN QD
Type Nano Material
Formula
Role layer
4

uid GaN

Type Complex Compound
Formula
Role layer
5

n-doped GaN

GaN:Mg
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
acoustic phonon coupling strength

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Product

p-i-n doped GaN nanopillar-embedded InGaN quantum dots

Pillar height: ~ 350 nm

Thickness: 200 nm

Thickness: 25 nm

Thickness: 600 nm

Medium/Support: none

References

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