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indium arsenide phosphide on InP substrate

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

indium arsenide phosphide

InAsP
Type Complex Compound
Formula
Role partial layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Medium: none

Support: Zn-doped InP wafer

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • Zn-doped InP wafer
Product

indium arsenide phosphide on InP substrate

Hole diameter: ~ 40 nm

Hole pitch: ~ 600 nm

Thickness: 20 nm

Medium: none

Support: Zn-doped InP wafer

References

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