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Ga0.94Mn0.06As quantum well/AlAs/p-GaAs:Be heterostructure

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Be-doped GaAs

GaAs:Be
Type Complex Compound
Formula
Role layer
2

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
3

gallium manganese arsenide quantum well

Ga0.94Mn0.06As quantum well Ga0.94Mn0.06As QW
Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
differential conductance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Product

Ga0.94Mn0.06As quantum well/AlAs/p-GaAs:Be heterostructure

Thickness: 100 nm

Thickness: 18.6 nm

Thickness: 5 nm

Medium: none

Support: p+-GaAs

Method 2

Type: Chemical synthesis
Source:
Product

Ga0.94Mn0.06As quantum well/AlAs/p-GaAs:Be heterostructure

Thickness: 100 nm

Thickness: 5 nm

Thickness: 9.8 nm

Medium: none

Support: p+-GaAs

Method 3

Type: Chemical synthesis
Source:
Product

Ga0.94Mn0.06As quantum well/AlAs/p-GaAs:Be heterostructure

Thickness: 100 nm

Thickness: 11.1 nm

Thickness: 5 nm

Medium: none

Support: p+-GaAs

Method 4

Type: Chemical synthesis
Source:
Product

Ga0.94Mn0.06As quantum well/AlAs/p-GaAs:Be heterostructure

Thickness: 100 nm

Thickness: 22.3 nm

Thickness: 5 nm

Medium: none

Support: p+-GaAs

Method 5

Type: Chemical synthesis
Source:
Product

Ga0.94Mn0.06As quantum well/AlAs/p-GaAs:Be heterostructure

Thickness: 100 nm

Thickness: 17.3 nm

Thickness: 5 nm

Medium: none

Support: p+-GaAs

References

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