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modulation doped core-shell GaAs/Al0.33Ga0.67As nanowires

Based on

1 Articles
2017 Most recent source

Composition

1

gallium arsenide

Type Complex Compound
Formula
Role core
2

gallium aluminium arsenide

GaAlAs
Type Complex Compound
Formula
Role layer
3

silicon-doped gallium aluminium arsenide

Si-doped GaAlAs
Type Complex Compound
Formula
Role layer
4

gallium aluminium arsenide

GaAlAs
Type Complex Compound
Formula
Role layer
5

gallium arsenide

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy of Si donors dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
lasers

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  1. UIMwYhxdE7x0aqPy1Lmgsj0OmujQEqCz5Y2Xg1
  2. 4u1togKh3fushYOYDs
Product

modulation doped core-shell GaAs/Al0.33Ga0.67As nanowires

Diameter: 130 nm

Diameter: 50 nm

Thickness: 5 nm

Medium/Support: none

References

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