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InN nanowires

Based on

10 Articles
1 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) nitride

indium nitride
Type Single Compound
Formula InN
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
angular distribution of negative piezopotential dependent on tilt angle

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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transmission electron microscopy

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  1. VrREY93mFTaXKxT
Product

InN nanowires

Top diameter: ~ 50 nm

Medium: none

Support: silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. QWKZm7
  2. 3QfuYuSr
  3. nPklKnESNJSXzW3af7gnJBBDdba
  4. Vy3BMkj6Dw5jUlIDO8dcUYJ1uTrTYrlN
  5. BHGaMhOBSak5Iteb2UlxEcbr7m2dxEoOcCAFe4Wyn7AqtuVEyWVX3F9H3FJ
Product

InN nanowires

Diameter: 10 - 100 nm

Length: 5000 - 50000 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  1. JyaS8B
  2. zm8czfhS
  3. tYRTua8jW813IZVtwpqyVCV6TkI
  4. cM1ZcwBCweRiUToMUNE2wU22x818q4sy
  5. iO9Eu8Sf0lOtWO6HoizQ04hoF8MFlZLvwEi7JtOd31KJjBPRZQRW2wJEGTV
Product

InN nanowires

Diameter: 10 - 100 nm

Length: 5000 - 50000 nm

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • indium
  1. EjR5THe
Product

InN nanowires

Diameter: ~ 71 nm

Height: 500 - 950000 nm

Spacing: 0.308 nm

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  1. iiA1bT
  2. HMfB41v9
  3. 4O0cYaeNnVYGDks5fJnhfx5kuqr
  4. lmcdgbIxyMNxzYA3F9seIs35ub3VfbI5
  5. BglU7YedCGaHfA5b0KkatqA0MCcsWi2beJBxd7eS0jE3lO1PmszFEFXVoeX
Product

InN nanowires

Diameter: 10 - 100 nm

Length: 5000 - 50000 nm

Medium/Support: none

References

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