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indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Te-doped InP

Te-InP n-InP
Type Complex Compound
Formula
Role core
2

indium gallium arsenide/indium phosphine quantum well

InGaAs/InP QW
Type Nano Material
Formula
Role layer
3

Te-doped InP

Te-InP n-InP
Type Complex Compound
Formula
Role layer

Properties

Applications

Area Application Source
lasers

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Characterization

Method Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • diethyltellurium
  • tri-n-butylphosphine
  • trimethylindigane
  1. ukzjkvsvS4REPEZrpS74L6xV4L
  2. jBl2S15
Product

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • diethyltellurium
  • tri-n-butylphosphine
  • trimethylindigane
  1. BTRWE7fWG5puUwLkcJK20m6Opa
  2. hGr3aGJ
Product

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • diethyltellurium
  • tri-n-butylphosphine
  • trimethylindigane
  1. rOvqH4RjCwEFPSIvqvPJCSln48
  2. oTlABWB
Product

indium phosphine with indium gallium arsenide multiple quantum well nanopillar array

References

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