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p-type GaAs nanowire vertical array

Based on

1 Articles
2017 Most recent source

Composition

1

patterned SiO2 thin film on n-GaAs substrate

Type Nano Material
Formula
Role layer
2

InGaP passivation shell-coated p-type GaAs nanowires

Type Nano Material
Formula
Role layer
3

benzocyclobutene

BCB
Type Single Compound
Formula C8H8
Role layer
4

Au/Zn/Au film

Type Complex Compound
Formula
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

p-type GaAs nanowire vertical array

Exposed nanowire region height: 400 nm

Medium: none

Support: n-GaAs

Method 2

Type: Physical formation
Source:
Starting materials
Product

p-type GaAs nanowire vertical array

Exposed nanowire region height: 400 nm

Medium: none

Support: n-GaAs

Method 3

Type: Physical formation
Source:
Starting materials
Product

p-type GaAs nanowire vertical array

Exposed nanowire region height: 400 nm

Medium: none

Support: n-GaAs

Method 4

Type: Physical formation
Source:
Starting materials
Product

p-type GaAs nanowire vertical array

Exposed nanowire region height: 400 nm

Medium: none

Support: n-GaAs

Method 5

Type: Physical formation
Source:
Starting materials
Product

p-type GaAs nanowire vertical array

Exposed nanowire region height: 400 nm

Medium: none

Support: n-GaAs

References

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