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Ga0.90In0.10As/Ga0.65Al0.35As/Ga0.95Mn0.05As/LTGaAs core/multishell nanowires

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium indium arsenide

Type Single Compound
Formula Ga0.9In0.1As
Role core
2

aluminium-doped gallium arsenide

aluminium gallium arsenide aluminum gallium arsenide gallium aluminum arsenide Al0.35Ga0.65As n+-AlGaAs
Type Single Compound
Formula Ga0.65Al0.35As
Role layer
3

LTGaAs/GaMnAs

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Curie temperature

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Applications

Characterization

Method Nanomaterial Variant Source
focused ion beam

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • indium gallium arsenide
  1. OL8apTrcpu81i564Ru6tWCA
  2. KYBxoYJ7UqSYDK9OWdZGtoihKx
  3. YGQJpF
Product

Ga0.90In0.10As/Ga0.65Al0.35As/Ga0.95Mn0.05As/LTGaAs core/multishell nanowires

Bottom tip diameter: ~ 70 nm

Bottom tip wall thickness: ~ 10 nm

Bottom tip wall thickness: ~ 5 nm

Length: 3500 - 4000 nm

Middle part wall thickness: 20 - 25 nm

Middle part wall thickness: 45 - 50 nm

Top tip diameter: 120 - 150 nm

Upper part RMS roughness: ~ 10 - ~ 30 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • indium gallium arsenide
  1. 4jvL7foE3yNwHuEkFoGu4uj
  2. QhN0ahBI4Q21AwfYi2KjQn5htM
  3. VWaabZ
Product

Ga0.90In0.10As/Ga0.65Al0.35As/Ga0.95Mn0.05As/LTGaAs core/multishell nanowires

Bottom tip diameter: ~ 70 nm

Bottom tip wall thickness: ~ 10 nm

Bottom tip wall thickness: ~ 5 nm

Length: 3500 - 4000 nm

Middle part wall thickness: 20 - 25 nm

Middle part wall thickness: 45 - 50 nm

Top tip diameter: 120 - 150 nm

Upper part RMS roughness: ~ 10 - ~ 30 nm

Medium/Support: none

References

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