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InAs nanowire array/pit-patterned GaAs(111)B

Based on

1 Articles
2017 Most recent source

Composition

1

gallium arsenide

GaAs(111)B
Type Single Compound
Formula GaAs
Role raw materials
2

indium arsenide nanowires

InAs nanowires InAs NW
Type Nano Material
Formula
Role graft

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
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  2. Sth0J9K3OV
Product

InAs nanowire array/pit-patterned GaAs(111)B

Size: not specified

Medium/Support: none

References

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