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Ga0.90In0.10As/Ga0.65Al0.35As/Ga0.95Mn0.05As/LTGaAs core/multishell nanowires

Based on

1 Articles
2017 Most recent source

Composition

1

gallium indium arsenide

Type Single Compound
Formula Ga0.9In0.1As
Role core
2

aluminium-doped gallium arsenide

aluminium gallium arsenide aluminum gallium arsenide gallium aluminum arsenide Al0.35Ga0.65As n+-AlGaAs
Type Single Compound
Formula Al0.35Ga0.65As
Role layer
3

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
4

MnAs nanocrystals

MnAs NC
Type Nano Material
Formula
Role layer
5

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role layer

Properties

General physical and chemical properties

Property Value Source
field-cooled magnetization

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Applications

Area Application Source
magnetic materials

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium-indium arsenide
  1. zqFKa8mHb2QbcxFUhIBuyrs
  2. 0KHJQOWAmIXT7Q7V6vHO9oHaDf
  3. EdCfIX
Product

Ga0.90In0.10As/Ga0.65Al0.35As/Ga0.95Mn0.05As/LTGaAs core/multishell nanowires

References

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