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In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs multilayer structure

Based on

1 Articles
2017 Most recent source

Composition

1

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
2

Ge/InAlAs nanocomposite

Type Nano Material
Formula
Role layer
3

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
4

Ge/InAlAs nanocomposite

Type Nano Material
Formula
Role layer
5

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
6

Ge/InAlAs

Type Complex Compound
Formula
Role layer
7

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
8

Ge/InAlAs

Type Complex Compound
Formula
Role layer
9

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
10

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • indium(III) phosphide
  • indium
See all (4)
  1. lrGiW4
Product

In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs multilayer structure

Thickness: 2 nm

Thickness: 200 nm

Medium: none

Support: indium(III) phosphide

References

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