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In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium aluminium arsenide

Type Single Compound
Formula In0.52Al0.48As
Role layer
2

Ge/InAlAs nanocomposite

Type Nano Material
Formula
Role layer
3

indium aluminium arsenide

indium gallium arsenide InGaAs
Type Single Compound
Formula In0.53Ga0.47As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
unit cell parameter

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
other

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • indium(III) phosphide
  • indium
See all (4)
  1. vGJMpg
Product

In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs

Thickness: 2 nm

Thickness: 200 nm

Thickness: 300 nm

Medium: none

Support: indium(III) phosphide

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • indium(III) phosphide
  • indium
See all (4)
  1. iM1hF7
Product

In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs

Thickness: 2 nm

Thickness: 200 nm

Thickness: 300 nm

Medium: none

Support: indium(III) phosphide

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • indium(III) phosphide
  • indium
See all (4)
  1. jxCU3N
Product

In0.53Ga0.47As-capped (Ge/InAlAs nanocomposite)/InAlAs

Thickness: 2 nm

Thickness: 200 nm

Thickness: 300 nm

Medium: none

Support: indium(III) phosphide

References

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