Loading ...

silver-coated indium gallium arsenide phosphide multiple quantum wells nanostructure material

Based on

1 Articles
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium gallium arsenide phosphide multiple quantum wells

InGaAsP multiple quantum wells InGaAsP MQW
Type Nano Material
Formula
Role layer
2

silver

Type Single Compound
Formula Ag
Role layer

Properties

Applications

Area Application Nanomaterial Variant Source
electronics

More information/entries available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
photoluminescence

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. t2pGVTsIdxqvt75wG6qbUbW
  2. CVpZYBClAjjzGPROeUTaXWXhmFDXd6fhXLmSq4PL3
Product

silver-coated indium gallium arsenide phosphide multiple quantum wells nanostructure material

Thickness on pillar: ~ 20 nm

Thickness on trenches: ~ 200 nm

Width on pillar: ~ 10 nm

Width on trenches: ~ 80 nm

Medium: none

Support: indium(III) phosphide

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial