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InAs/GaSb core-shell nanowires

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role core
2

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • tertiary-butyl-arsine
  • trimethylindigane
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  2. fsapzdmW4RrT8QggAdMY
Product

InAs/GaSb core-shell nanowires

Cap thickness: 100 - 150 nm

Diameter: 60 nm

Length: 2000 nm

Thickness: 30 nm

Medium/Support: none

References

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