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GaAs film

Based on

25 Articles
3 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

low temperature gallium arsenide

gallium(III) arsenide gallium arsenide LTGaAs GaAs
Type Single Compound
Formula AsGa
Role raw materials

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on on-off state

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. a9CTPOw
  2. PXlBvp
  3. eH7vT
Product

GaAs film

Hole depth: ~ 48 nm

Thickness: 100 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic(III) oxide
  • gallium
  1. LKdC9VhLSzlwb8Jw
  2. fBvdK0Z6iVpgbanujtvrv5dcrEMS
  3. I5xa
  4. exMPkIy
Product

GaAs film

Grain size: ~ 5 nm

Thickness: 10 - 100 nm

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • low temperature gallium arsenide
  1. KjxtiB
Product

GaAs film

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
Product

GaAs film

Thickness: 12 nm

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • low temperature gallium arsenide
  1. SnQjlc
Product

GaAs film

Thickness: 100 nm

Medium/Support: none

References

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