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CdSe/ZnS quantum dot/Ag nanodisk array/InGaN/GaN quantum well

Based on

1 Articles
2016 Most recent source

Composition

1

Ag nanobox array decorated InGaN/GaN quantum well

Type Nano Material
Formula
Role raw materials
2

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role layer
3

CdSe/ZnS core-shell nanocrystals

CdSe/ZnS quantum dots CdSe/ZnS QD
Type Nano Material
Formula
Role fillers

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence decay plot

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
See all (4)
  1. uV7amnGr0voU35Gw
Product

CdSe/ZnS quantum dot/Ag nanodisk array/InGaN/GaN quantum well

Thickness: ~ 80 nm

Medium: none

Support: sapphire/GaN

Method 2

Type: Physical formation
Source:
Starting materials
See all (4)
  1. E8RaMPqm5B3TneQy
Product

CdSe/ZnS quantum dot/Ag nanodisk array/InGaN/GaN quantum well

Thickness: ~ 80 nm

Medium: none

Support: sapphire/GaN

Method 3

Type: Physical formation
Source:
Starting materials
See all (4)
  1. nXJyWaGrcdHUE3rP
Product

CdSe/ZnS quantum dot/Ag nanodisk array/InGaN/GaN quantum well

Thickness: ~ 80 nm

Medium: none

Support: sapphire/GaN

Method 4

Type: Physical formation
Source:
Starting materials
See all (4)
  1. DW0fBZSJjXwLc9n6
Product

CdSe/ZnS quantum dot/Ag nanodisk array/InGaN/GaN quantum well

Thickness: ~ 80 nm

Medium: none

Support: sapphire/GaN

Method 5

Type: Physical formation
Source:
Starting materials
See all (4)
  1. BvwpnewqOEHRmS0T
Product

CdSe/ZnS quantum dot/Ag nanodisk array/InGaN/GaN quantum well

Thickness: ~ 80 nm

Medium: none

Support: sapphire/GaN

References

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