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Si δ-doped GaAs quantum well-based structure

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role layer
2

Vacuous

Type
Formula
Role layer
3

silicon

Type Single Compound
Formula Si
Role layer
4

Vacuous

Type
Formula
Role layer
5

sapphire

Type Single Compound
Formula Al2O3
Role layer
6

silicon δ-doped gallium arsenide quantum wells

Si δ-doped GaAs quantum wells Si δ-doped GaAs QW
Type Nano Material
Formula
Role layer
7

Vacuous

Type
Formula
Role layer
8

silicon

Type Single Compound
Formula Si
Role layer
9

Vacuous

Type
Formula
Role layer
10

silicon

Type Single Compound
Formula Si
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Landau level filling factor dependent on mode number

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. LJiuSNbEJRAO6UUjIlQLktBchIFgmhWpTmf62QudRFrdotcy3OGz2l1PkalYSG1bWd7LiMHD4G4eUpCoxNUK
Product

Si δ-doped GaAs quantum well-based structure

Thickness: 100000 nm

Thickness: 50000 nm

Medium/Support: none

References

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