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[(Al0.75Ga0.25N)2(GaN)1]3/Al0.75Ga0.25N multiple quantum wells

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

aluminium gallium nitride

aluminum gallium nitride
Type Single Compound
Formula Al0.75Ga0.25N
Role layer
2

[(Al0.75Ga0.25N)2(GaN)1]3/Al0.75Ga0.25N

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence decay plot dependent on temperature

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Applications

Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • gallium
  • nitrogen
Product

[(Al0.75Ga0.25N)2(GaN)1]3/Al0.75Ga0.25N multiple quantum wells

Thickness: 31 nm

Medium/Support: none

References

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