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In0.25Ga0.75N/GaN (In0.18Ga0.82N) dual quantum well

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

n-doped GaN

n-GaN
Type Complex Compound
Formula
Role layer
2

In0.25Ga0.75N

Type Nano Material
Formula
Role layer
3

n-doped GaN

n-GaN
Type Complex Compound
Formula
Role layer
4

In0.18Ga0.82N

Type Nano Material
Formula
Role layer
5

p-doped GaN

p-GaN
Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron-hole wavefunctions overlap

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • sapphire
  1. xRoq6T
Product

In0.25Ga0.75N/GaN (In0.18Ga0.82N) dual quantum well

Size: not specified

Medium: none

Support: sapphire

References

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