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indium arsenide nanowires

Based on

3 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

indium arsenide

Type Single Compound
Formula InAs
Role core
2

oxidation layer

Type Complex Compound
Formula
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band structure simulation

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Applications

Area Application Nanomaterial Variant Source
electrodes/electrolytes

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

indium arsenide nanowires

Diameter: 108 nm

Length: 930 - 970 nm

Pattern pitch: 250 nm

Thickness: 1 - 1.5 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

indium arsenide nanowires

Diameter: 115 nm

Length: 930 - 970 nm

Pattern pitch: 250 nm

Thickness: 1 - 1.5 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

indium arsenide nanowires

Diameter: 102 nm

Length: 930 - 970 nm

Pattern pitch: 250 nm

Thickness: 1 - 1.5 nm

Medium/Support: none

References

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