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SiO2/Si3N4 multilayer-capped HgTe QW embedded between Hg0.3Cd0.7Te with bottom Hg0.3Cd0.7Te doped with iodine

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

HgTe quantum well

HgTe QW
Type Nano Material
Formula
Role raw materials
2

SiO2/Si3N4 multilayer film

Type Nano Material
Formula
Role layer

Properties

General physical and chemical properties

Property Value Source
quantum well magnetoresistance dependent on SiO2-Si3N4 multilayer applied voltage

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Applications

Characterization

Biological effects

Preparation

References

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