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Al0.24Ga0.76As/Al0.0046Ga0.9954As/Al0.24Ga0.76As quantum well

Based on

1 Articles
2014 Most recent source

Composition

1

Si-doped aluminum gallium arsenide

Type Complex Compound
Formula
Role layer
2

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
3

aluminum gallium arsenide

Type Single Compound
Formula Al0.0046Ga0.9954As
Role layer
4

aluminium gallium arsenide

aluminum gallium arsenide aluminum-gallium arsenide
Type Single Compound
Formula Al0.24Ga0.76As
Role layer
5

Si-doped aluminum gallium arsenide

Type Complex Compound
Formula
Role layer
6

gallium arsenide

Type Single Compound
Formula GaAs
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron density

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • arsenic
  • aluminium
See all (4)
  1. tSrtan2AI60H7z
Product

Al0.24Ga0.76As/Al0.0046Ga0.9954As/Al0.24Ga0.76As quantum well

Thickness: 10 nm

Thickness: 30 nm

Thickness: 75 nm

Medium/Support: none

References

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