Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Be-doped GaAs

GaAs:Be
Type Complex Compound
Formula
Role layer
2

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
3

Ga0.9945Mn0.0055As

Type Single Compound
Formula Ga0.9945Mn0.0055As
Role layer
4

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
5

gallium manganese arsenide

Type Single Compound
Formula Ga0.94Mn0.06As
Role layer

Properties

General physical and chemical properties

Property Value Source
resistance-area product

0 more entry available to subscribers only.

Or, view sample content

Applications

Characterization

Method Source
scanning tunneling spectroscopy

1 more entry available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • beryllium
  • gallium
Product

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • beryllium
  • gallium
Product

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial