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Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Be-doped GaAs

GaAs:Be
Type Complex Compound
Formula
Role layer
2

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
3

Ga0.9945Mn0.0055As

Type Single Compound
Formula Ga0.9945Mn0.0055As
Role layer
4

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
5

gallium manganese arsenide

Type Single Compound
Formula Ga0.94Mn0.06As
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
resistance-area product

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Applications

Characterization

Method Nanomaterial Variant Source
scanning tunneling spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • beryllium
  • gallium
Product

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Diameter: 200000 nm

Thickness: 100 nm

Thickness: 20 nm

Thickness: 6 nm

Thickness: ~ 11 nm

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Diameter: 200000 nm

Thickness: 10 - 16 nm

Thickness: 100 nm

Thickness: 20 nm

Thickness: 6 nm

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.94Mn0.06As/AlAs/Ga0.9945Mn0.0055As/AlAs/GaAs:Be double barrier quantum well array

Diameter: 200000 nm

Thickness: 100 nm

Thickness: 20 nm

Thickness: 3 - 8 nm

Thickness: 6 nm

Medium/Support: none

References

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