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strained-Ge/SiGe quantum well

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

germanium silicide

Type Single Compound
Formula GeSi
Role layer
2

germanium silicide

silicon-germanium silicon germanium SiGe
Type Single Compound
Formula SiGe
Role layer
3

germanium

Type Single Compound
Formula Ge
Role layer
4

germanium silicide

silicon-germanium silicon germanium SiGe
Type Single Compound
Formula SiGe
Role layer
5

silicon

Type Single Compound
Formula Si
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
characteristic magnetic field for k-cubic spin-orbit coupling

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • germanium
  1. UqCqQ0onw9Fb0PCpVFBFGefGvBYw03y22dZu9ySJMPRXYkMMZzmNOoJTs
Product

strained-Ge/SiGe quantum well

Thickness: 10 nm

Thickness: 20 nm

Thickness: 3 nm

Thickness: 30 nm

Medium/Support: none

References

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