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Ga0.95Mn0.05As/AlAs/Ga0.9996Be0.0004As/AlAs/GaAs:Be double barrier quantum wells

Based on

1 Articles
2016 Most recent source

Composition

1

Be-doped GaAs

GaAs:Be
Type Complex Compound
Formula
Role layer
2

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
3

Ga0.9996Be0.0004As

Type Single Compound
Formula Ga0.9996Be0.0004As
Role layer
4

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
5

manganese-doped gallium arsenide

Mn-doped GaAs
Type Single Compound
Formula Ga0.96Mn0.04As
Role layer

Properties

Applications

Characterization

Method Nanomaterial Variant Source
scanning tunneling spectroscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.95Mn0.05As/AlAs/Ga0.9996Be0.0004As/AlAs/GaAs:Be double barrier quantum wells

Diameter: 200000 nm

Thickness: 100 nm

Thickness: 12 nm

Thickness: 20 nm

Thickness: 6 nm

Medium/Support: none

References

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