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n-Si/SiO2/TiO2 heterojunction

Based on

5 Articles
1 Patents
2017 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
2

amorphous titanium(IV) oxide

amorphous titanium dioxide amorphous titania a-titania a-TiO2
Type Single Compound
Formula TiO2
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
acetone degradation under irradiation

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Applications

Area Application Nanomaterial Variant Source
coatings

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Characterization

Method Nanomaterial Variant Source
UV

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. wCMEe4
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 3.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. FatoHm
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 2.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 3

Type: Physical formation
Source:
Starting materials
  1. 4XUHOWzd6H8TxhNATgsDWxN55rIierQnxBOKUH9oSN4SC
  2. LWWyWi
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 2.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. QqkJF6
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 5.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • phosphorus-doped silicon
  • oxygen
  1. 9MJY3n
Product

n-Si/SiO2/TiO2 heterojunction

Thickness: 4.5 nm

Thickness: ~ 1.2 nm

Medium: none

Support: phosphorus-doped silicon

References

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