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InAs quantum dots on porous gallium arsenide

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium arsenide

Type Single Compound
Formula GaAs
Role layer
2

example of semiconductor nanoparticles

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Type Nano Material
Formula
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
photoluminescence decay plot

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium arsenide
  • indium(III) arsenide
Product

InAs quantum dots on porous gallium arsenide

Hole periodicity: 235 - 238 nm

Hole radius: ~ 69 - ~ 72 nm

Thickness: 160 nm

Medium/Support: none

References

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