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p-doped Si/SiO2/Ti/Al/InAs NW nanostructured material

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p-doped Si

Type Complex Compound
Formula
Role layer
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role layer
3

titanium

Type Single Compound
Formula Ti
Role partial layer
4

aluminium

aluminum
Type Single Compound
Formula Al
Role partial layer
5

indium arsenide nanowires

InAs nanowires
Type Nano Material
Formula
Role partial layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Bogoliubov quasiparticles charge dependent on transmission

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Applications

Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. QXRvyLd
Product

p-doped Si/SiO2/Ti/Al/InAs NW nanostructured material

Channel length: 210 nm

Thickness: 120 nm

Thickness: 150 nm

Thickness: 5 nm

Medium/Support: none

References

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