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Ga0.94Mn0.06As/AlAs/Ga0.977Mn0.023As/AlAs/GaAs:Be double barrier quantum well array

Based on

1 Articles
2016 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

Be-doped GaAs

GaAs:Be
Type Complex Compound
Formula
Role layer
2

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
3

Ga0.977Mn0.023As

Type Single Compound
Formula Ga0.977Mn0.023As
Role layer
4

aluminium arsenide

aluminum arsenide
Type Single Compound
Formula AlAs
Role layer
5

gallium manganese arsenide

Type Single Compound
Formula Ga0.94Mn0.06As
Role layer

Properties

General physical and chemical properties

Property Value Source

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Applications

Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • gallium
  • beryllium
Product

Ga0.94Mn0.06As/AlAs/Ga0.977Mn0.023As/AlAs/GaAs:Be double barrier quantum well array

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • arsenic
  • beryllium
  • gallium
Product

Ga0.94Mn0.06As/AlAs/Ga0.977Mn0.023As/AlAs/GaAs:Be double barrier quantum well array

References

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