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GaN/In0.12Ga0.88N structure with In0.12Ga0.88N QWs placed in centers of GaN layers

Based on

1 Articles
2015 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

In0.12Ga0.88N/GaN quantum well

In0.12Ga0.88N/GaN QW
Type Nano Material
Formula
Role layer
2

aluminium gallium nitride

aluminum gallium nitride Al0.3Ga0.7N
Type Single Compound
Formula Al0.3Ga0.7N
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
exciton Bohr radius

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Applications

Area Application Nanomaterial Variant Source
analysis methods

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Characterization

Biological effects

Preparation

References

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