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double quantum well heterostructure

Based on

1 Articles
2015 Most recent source

Composition

1

gallium antimonide

Type Single Compound
Formula GaSb
Role layer
2

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer
3

aluminium(III) antimonide

aluminium antimonide aluminum antimonide AlSb
Type Single Compound
Formula AlSb
Role layer
4

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer
5

indium(III) arsenide

indium monoarsenide indium arsenide
Type Single Compound
Formula InAs
Role layer
6

aluminium(III) antimonide

aluminium antimonide aluminum antimonide AlSb
Type Single Compound
Formula AlSb
Role layer
7

gallium(III) antimonide

gallium antimonide
Type Single Compound
Formula GaSb
Role layer
8

silicon nitride

Type Single Compound
Formula Si3N4
Role layer
9

titanium

Type Single Compound
Formula Ti
Role layer
10

gold

Type Single Compound
Formula Au
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electron density

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • gallium(III) antimonide
  • gallium antimonide
Product

double quantum well heterostructure

Thickness: 100 nm

Thickness: 12.5 nm

Thickness: 3 nm

Thickness: 5 nm

Thickness: 50 nm

Thickness: 70 nm

Medium/Support: none

References

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