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HgTe quantum well-based multilayer structure

Based on

1 Articles
2015 Most recent source

Composition

1

zinc telluride

Type Single Compound
Formula ZnTe
Role layer
2

cadmium telluride

Type Single Compound
Formula CdTe
Role layer
3

cadmium mercury telluride

Type Single Compound
Formula Cd0.65Hg0.35Te
Role layer
4

hydrargyrum telluride

hydrargyrum telluride mercury telluride
Type Single Compound
Formula HgTe
Role layer
5

cadmium mercury telluride

Type Single Compound
Formula Cd0.65Hg0.35Te
Role layer
6

cadmium telluride

Type Single Compound
Formula CdTe
Role layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
Hall resistivity

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc
  • tellurium
  1. LMYKfJ7bCaCrOWe2DxZ
Product

HgTe quantum well-based multilayer structure

Thickness: 14 nm

Thickness: 20 nm

Thickness: 40 nm

Thickness: ~ 30 nm

Medium/Support: none

References

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